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absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 18 i d @ v gs = 10v, t c = 100c continuous drain current 11 i dm pulsed drain current 72 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 450 mj i ar avalanche current 18 a e ar repetitive avalanche energy 12.5 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in.(1.6mm) from case for 10s) weight 9.3 (typical) g hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state resistance combined with high transconductance. hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. o c a power mosfet thru-hole (to-254aa) www.irf.com 1 product summary part number r ds(on) i d irfm240 0.18 ? 18a for footnotes refer to the last page irfm240 jantx2n7219 jantxv2n7219 ref:mil-prf-19500/596 200v, n-channel hexfet ? mosfet technology simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight features: to-254aa pd - 90555e
irfm240 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.29 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.18 v gs = 10v, i d = 11a resistance ? ? 0.25 v gs = 10v, i d = 18a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.1 ? ? s v ds > 15v, i ds = 11a i dss zero gate voltage drain current ? ? 25 v ds = 160v ,v gs =0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 60 v gs =10v, i d = 18a q gs gate-to-source charge ? ? 14.6 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 37.6 t d (on) turn-on delay time ? ? 20 v dd = 100v, i d = 18a, t r rise time ? ? 105 v gs =10v, r g = 9.1 ? t d (off) turn-off delay time ? ? 58 t f fall time ? ? 67 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1300 ? v gs = 0v, v ds = 25v c oss output capacitance ? 400 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 130 ? na nh ns a note: corresponding spice and saber models are available on the international rectifier website. for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.0 r thjs case-to-sink ? 0.21 ? r thja junction-to-ambient ? ? 48 typi cal socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 18 i sm pulse source current (body diode) ?? 72 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 18a, v gs = 0v t rr reverse recovery time ? ? 500 ns t j = 25c, i f = 18a, di/dt 100a/ s q rr reverse recovery charge ? ? 5.3 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a ? measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
www.irf.com 3 irfm240 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
irfm240 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage
www.irf.com 5 irfm240 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
irfm240 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circui t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 . v gs
www.irf.com 7 irfm240 i sd 18a, di/dt 150a/ s, v dd 200v, t j 150c pulse width 300 s; duty cycle 2% repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 1.3mh peak i l = 18a, v gs = 10v footnotes: case outline and dimensions ? to-254aa 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c
3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535]
b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2007

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